- patented trench schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test v rrm v dv/dt v/ s typ. max. typ. max. i f = 5a 0.52 - 0.56 - i f = 7.5a 0.56 - 0.65 - i f = 15a 0.66 0.74 0.78 0.88 i f = 5a 0.44 - 0.49 - i f = 7.5a 0.51 - 0.56 - i f = 15a 0.60 0.67 0.65 0.75 t j = 25c 12 500 15 500 a t j = 125c 7.035535ma r jc c/w t j c t stg c document number: ds_d1411051 version: d14 v instantaneous reverse current per diode at rated reverse voltage i r typical thermal resistance per diode 2.5 t j = 125c v f instantaneous forward voltage per diode ( note1 ) t j = 25c v f storage temperature range - 55 to +150 note 1: pulse test with pulse width=300 s, 1% duty cycle peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 160 a - 55 to +150 voltage rate of change (rated v r ) 10000 isolation voltage from terminal to heatsink t = 1 min v ac 1500 maximum average forward rectified current per device i f(av) 30 a per diode 15 tsf30u 120c unit ito-220ab polarity: as marked molding compound meets ul 94 v-0 flammability rating maximum repetitive peak reverse voltage 100 120 tsf30u100c thru TSF30U120C typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. mechanical data case: ito-220ab trench schottky rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec taiwan semiconductor - halogen-free according to iec 61249-2-21 definition v 3.5 operating junction temperature range mounting torque: 0.56 nm max. weight: 1.7 g (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter symbol tsf30u 100c
note 1: "xxx" defines voltage from 100v (tsf30u100c) to 120v (TSF30U120C) document number: ds_d1411051 version: d14 green compound description 50 / tube packing tsf30u100c thru TSF30U120C ordering information example taiwan semiconductor package ito-220ab g c0 part no. packing code tsf30uxxxc (note 1) packing code suffix preferred part no. part no. packing code packing code suffix tsf30u100c c0g tsf30u100c c0 g 0 10 20 30 40 0 25 50 75 100 125 150 average forward current (a) case temperature ( o c) fig.1 forward current derating curve with heatsink 3in x 5in x 0.25in al-plate tsf30u100c TSF30U120C 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 instantaneous forward current (a) forward voltage (v) fig. 2 typical forward characteristics per leg tsf30u100 t j =150 o c pulse width=300 s 1% duty cycle t j =25 o c t j =100 o c t j =125 o c 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg t j =25 o c t j =100 o c t j =125 o c t j =150 o c tsf30u100c 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg pulse width=300 s 1% duty cycle TSF30U120C t j =150 o c t j =25 o c t j =100 o c t j =125 o c
document number: ds_d1411051 version: d14 tsf30u100c thru TSF30U120C taiwan semiconductor 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 6 typical junction capacitance per leg f=1.0mhz vsig=50mvp-p tsf30u100c TSF30U120C 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics per leg t j =25 o c t j =100 o c t j =125 o c t j =150 o c TSF30U120C
dim. min max min max a 4.30 4.70 0.17 0.19 b 2.50 3.16 0.10 0.12 c 2.30 2.96 0.09 0.12 d 0.46 0.76 0.02 0.03 e 6.30 6.90 0.25 0.27 f 9.60 10.30 0.38 0.41 g 3.00 3.40 0.12 0.13 h 0.95 1.45 0.04 0.06 i 0.50 0.90 0.02 0.04 j 2.40 3.20 0.09 0.13 k 14.80 15.50 0.58 0.61 l - 4.10 - 0.16 m 12.60 13.80 0.50 0.54 n - 1.80 - 0.07 o 2.41 2.67 0.09 0.11 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1411051 version: d14 marking diagram tsf30u100c thru TSF30U120C taiwan semiconductor package outline dimensions ito-220ab unit (mm) unit (inch)
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1411051 version: d14 tsf30u100c thru TSF30U120C taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
|
